| PART |
Description |
Maker |
| SHD123668N SHD123668P SHD123668D |
POWER SCHOTTKY RECTIFIER Very Low Reverse Leakage 120 A, SILICON, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| SHD114634B |
HERMETIC POWER SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200∑C Operating Temperature 120 A, SILICON, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| YG855C12R |
120 V, SILICON, RECTIFIER DIODE
|
FUJI ELECTRIC CO LTD
|
| V20120S-E3/4W |
20 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB
|
VISHAY SEMICONDUCTORS
|
| 1N1301 1N2283 1N4526 1N1196A 1N1196 1N2021 1N1192A |
Standard Rectifier (trr more than 500ns)
(1N2xxx) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB
(1N4525 - 1N4529) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 350 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| MBRT120100R MBRT12045 MBRT12045R MBRT12060 |
Silicon Power Schottky Diod
|
GeneSiC Semiconductor, ...
|
| SMDT-650H-12 SMDT-650H-14 SMDT-650H-16 SMDT-650H-1 |
Diod-Thyristor Module
|
SEMPO ELECTRONIC Limited
|
| PH868C12 |
High Voltage Schottky barrier diode 30 A, 120 V, SILICON, RECTIFIER DIODE, TO-247
|
FUJI ELECTRIC CO LTD
Fuji Electric Holdings Co., Ltd.
|
| TP858C12R |
Schottky Barrier Diode
120 V, SILICON, RECTIFIER DIODE
|
FUJI ELECTRIC CO LTD
|
| BAV19 BAV21 BAV20 BAV19-TP |
500mW Small Signal Diodes 120 to 250 Volts
0.2 A, 120 V, SILICON, SIGNAL DIODE, DO-35
|
Micro Commercial Components
|
| BYV118F BYV118F-35 BYV118F-40 BYV118F-45 BYV118X B |
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 10 A, 40 V, SILICON, RECTIFIER DIODE
DB-25 MALE CONN KIT CRIMP 10 A, 40 V, SILICON, RECTIFIER DIODE
CRIMP SHELLS DB25 MALE 10 A, 35 V, SILICON, RECTIFIER DIODE
Rectifier diodes Schottky barrier 10 A, 35 V, SILICON, RECTIFIER DIODE
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
|
